منابع مشابه
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO2 films is described. Assuming a two-step trapassisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-...
متن کاملdetermination of some physical and mechanical properties red bean
چکیده: در این تحقیق، برخی خواص فیزیکی و مکانیکی لوبیا قرمز به-صورت تابعی از محتوی رطوبت بررسی شد. نتایج نشان داد که رطوبت بر خواص فیزیکی لوبیا قرمز شامل طول، عرض، ضخامت، قطر متوسط هندسی، قطر متوسط حسابی، سطح تصویر شده، حجم، چگالی توده، تخلخل، وزن هزار دانه و زاویه ی استقرار استاتیکی در سطح احتمال 1 درصد اثر معنی داری دارد. به طوری که با افزایش رطوبت از 54/7 به 12 درصد بر پایه خشک طول، عرض، ضخام...
15 صفحه اولOrigin of Spontaneous Currents in a Superconductor-Ferromagnet Proximity System
We have previously shown that a ferromagnet-superconductor heterostructure may possess a spontaneous current circulation parallel to the interface. This current is caused by Andreev bound states in the thin ferromagnetic layer, and can be fully spin-polarized. Here we investigate the total energy of the system in cases where the current either does or does not flow. We show that the current is ...
متن کاملThe Origin of Net Electric Currents in Solar Active Regions
There is a recurring question in solar physics regarding whether or not electric currents are neutralized in active regions (ARs). This question was recently revisited using three-dimensional (3D) magnetohydrodynamic (MHD) numerical simulations of magnetic flux emergence into the solar atmosphere. Such simulations showed that flux emergence can generate a substantial net current in ARs. Other s...
متن کاملSodium channel gating currents. Origin of the rising phase
There has been some uncertainty in the past as to the origin of the rising phase of the gating current. We present evidence here that proves that the gating current does not have a rising phase and that the observed rising phase is due to an uncompensated series resistance in the Frankenhaeuser-Hodgkin (F-H) space. When a squid giant axon is bathed in a solution that is 10-20% hyperosmotic with...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Annales Geophysicae
سال: 2016
ISSN: 1432-0576
DOI: 10.5194/angeo-34-153-2016